Research progress on sintering technology and performance optimization of AlN ceramics

doi:10.3969/j.issn.1001-1935.2022.02.019

Abstract

Abstract:

The rapid development of microelectronics technology puts forward higher and higher requirements for the performance of chip substrates and packaging materials.AlN ceramics are used as chip substrates and packaging materials due to their high thermal conductivity,high strength,linear expansion coefficient close to silicon,low dielectric constant,and excellent high temperature resistance and corrosion resistance.The research progress of AlN ceramics in term of the influence of sintering technologies and sintering aids on their properties was reviewed.The problems during the preparation and application of AlN ceramics were pointed out,and the development trend was prospected.

Key words: aluminium nitride, sintering technology, sintering aid

摘要：

微电子技术的飞速发展对芯片基板和封装材料性能的要求越来越高。AlN陶瓷因其高热导率、高强度、线膨胀系数与硅接近、介电常数小、耐高温和耐腐蚀性能优异而被用作芯片基板和封装材料。主要从烧结技术和烧结助剂对AlN陶瓷性能影响方面综述了AlN陶瓷的研究进展,并指出了AlN陶瓷在制备及应用过程中存在的问题,展望了AlN陶瓷的发展趋势。

关键词: AlN, 烧结技术, 烧结助剂

CLC Number:

TQ175

Wang Lulu, Ma Beiyue, Liu Chunming, Deng Chengji, Yu Jingkun. Research progress on sintering technology and performance optimization of AlN ceramics[J]. Refractories, 2022, 56(2): 180-184.

王露露, 马北越, 刘春明, 邓承继, 于景坤. AlN陶瓷烧结技术及性能优化研究进展[J]. 耐火材料, 2022, 56(2): 180-184.

Figures/Tables 1

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烧结技术	优点	缺点
无压烧结	设备简单,成本低	烧结温度高,致密度低
热压烧结	致密度高,均匀性好,周期短	AlN晶粒生长过大,均匀性差,周期长,只适合形状简单的AlN陶瓷
放电等离子烧结	致密度高,周期短,抑制晶粒生长过大等	只适合尺寸较小且形状简单的AlN陶瓷
等离子活化烧结	原位净化,致密度高,抑制晶粒生长过大等	只适合尺寸较小且形状简单的AlN陶瓷
微波烧结	致密度高,升温速率快	易出现局部受热,产品均匀性差

烧结技术	优点	缺点
无压烧结	设备简单,成本低	烧结温度高,致密度低
热压烧结	致密度高,均匀性好,周期短	AlN晶粒生长过大,均匀性差,周期长,只适合形状简单的AlN陶瓷
放电等离子烧结	致密度高,周期短,抑制晶粒生长过大等	只适合尺寸较小且形状简单的AlN陶瓷
等离子活化烧结	原位净化,致密度高,抑制晶粒生长过大等	只适合尺寸较小且形状简单的AlN陶瓷
微波烧结	致密度高,升温速率快	易出现局部受热,产品均匀性差