埋碳条件下石墨烯与硅粉反应过程研究

doi:10.3969/j.issn.1001-1935.2023.01.010

耐火材料 ›› 2023, Vol. 57 ›› Issue (1): 45-49.DOI: 10.3969/j.issn.1001-1935.2023.01.010

埋碳条件下石墨烯与硅粉反应过程研究

郁柏松¹⁾, 朱业宁¹⁾, 席子建¹⁾, 苏玉庆¹⁾, 孙苗苗¹⁾, 魏军从¹⁾, 涂军波¹⁾, 王义龙²⁾

1)华北理工大学河北省无机非金属材料重点实验室河北唐山 063210
2)唐山市国亮特殊耐火材料有限公司河北唐山 063000

收稿日期:2022-03-25 出版日期:2023-02-15 发布日期:2023-02-21
作者简介:郁柏松:男,1995年生,硕士研究生。E-mail:994575303@qq.com
基金资助:
河北省自然科学基金资助项目(E2017209164)。

Reaction process of graphene and silicon powder under carbon embedded condition

Yu Baisong, Zhu Yening, Xi Zijian, Su Yuqing, Sun Miaomiao, Wei Juncong, Tu Junbo, Wang Yilong

Hebei Province Key Laboratory of Inorganic Nonmetallic Materials,North China University of Science and Technology,Tangshan 063210,Hebei,China

Received:2022-03-25 Online:2023-02-15 Published:2023-02-21

摘要/Abstract

摘要： 为探究埋碳条件下石墨烯与硅粉的反应过程,对多层石墨烯(层数＜30)和w(Si)=99.47%的硅粉于不同温度下(1 000、1 100、1 200、1 300、1 400、1 500、1 600 ℃)热处理3 h,结合反应后试样的物相组成和显微结构,对试样的反应过程进行热力学分析和机制探究。结果表明:1)热处理温度为1 000 ℃时,试样中出现了以SiC为晶核的无定形SiO₂微球;2)热处理温度为1 200 ℃时,生成以SiC纳米线为桥和桥上的无定形SiO₂球体构成的串珠状晶须;3)热处理温度＜1 400 ℃时,SiO₂微球和串珠状晶须的含量、直径均随着温度的升高逐渐增大;4)热处理温度为1 500 ℃时,发生碳热还原反应,无定形SiO₂含量逐渐减少,SiC纳米线含量增多;5)热处理温度为1 600 ℃时,试样内均是SiC纳米线,且SiC纳米线的生长主要遵循气-固反应机制。

关键词: 埋碳, 石墨烯, SiO₂微球, SiC纳米线

Abstract: In order to explore the reaction process of graphene and silicon powder under carbon embedded condition,the multi-layer graphene (layer number＜30) and silicon powder (99.47% by mass) were heat treated at different temperatures (1 000,1 100,1 200,1 300,1 400,1 500,and 1 600 ℃) for 3 h.Combined with the phase composition and the microstructure of the samples,the thermodynamic analysis and the mechanism investigation were conducted.The results show that:(1)when the sample is heat treated at 1 000 ℃,amorphous SiO₂ microspheres with SiC crystal nucleus appear;(2)at 1 200 ℃,bead-like whiskers form,which are made of SiC nanowires bridge and the amorphous SiO₂ spheres on the bridge;(3)when the hot treatment temperature is lower than 1 400 ℃,the content and the diameter of SiO₂ microspheres and bead-like whiskers gradually increase with temperature rising;(4)at 1 500 ℃,carbothermic reduction reaction occurs,amorphous SiO₂ gradually decreases,and the SiC nanowire content increase;(5)at 1 600 ℃,there are all SiC nanowires in the samples,and the growth of SiC nanowires mainly follows the gas-solid reaction mechanism.

Key words: carbon embedded, graphene, SiO₂ microsphere, SiC nanowires

中图分类号:

TQ175

郁柏松, 朱业宁, 席子建, 苏玉庆, 孙苗苗, 魏军从, 涂军波, 王义龙. 埋碳条件下石墨烯与硅粉反应过程研究[J]. 耐火材料, 2023, 57(1): 45-49.

Yu Baisong, Zhu Yening, Xi Zijian, Su Yuqing, Sun Miaomiao, Wei Juncong, Tu Junbo, Wang Yilong. Reaction process of graphene and silicon powder under carbon embedded condition[J]. Refractories, 2023, 57(1): 45-49.

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埋碳条件下石墨烯与硅粉反应过程研究

Reaction process of graphene and silicon powder under carbon embedded condition

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